Kizspy | Question: 30
(Choose 1 answer)
A. 25 Vdc, 310 mW
B. -25 Vdc, 12.4 mAdc
C. 50 Vdc, 12.4 mAdc
D. -25 Vdc, 10 mAdc
Refer to this portion of a specification sheet. Determine the values of reverse-gate-
source voltage and gate current if the FET was forced to accept it.
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain-Source Voltage
VDg
25
Vdc
Drain-Gate Voltage
VDG
25
Vac
Reverse Gate-Source Voltage
VGSR
-25
Vdc
Gate Current
IG
10
mA dc
Total Device Dissipation @ T = 25°C
Decrease above 25°C
Ро
310
2.82
mW
mW/°C
Junction Temperature Range
T₁
125
°С
Storage Channel Temperature Range
Tstr
-65 to +150
°С
